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无线电电子学
Characterization of Ga N_x As_(1 - x) Alloy Grownon Ga As by Molecular Beam Epitaxy
1 IntroductionGa Nx As1 - x,the combination of small amount of nitrogen and Ga As,has beenexperimentally observed with the band gaps several hundreds me V lower than that ofGa As[1~ 4] .The alloy has attracted considerable attention in the applications
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半导体学报
2000年03期
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