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Cathode Luminescence Characteristics of ZnGa_2O_4 Phosphor Thin Films with the Doped Activator

Choi Hyung-Wook;Lee Seung-Kyu;Hong Beom-Joo;Park Yong-Seo;Kim Kyung-Hwan;Yoon Hyon-Hee

  Submission The ZnGa_2O_4 phosphor thin films were synthesized by RF magnetron sputtering system at the various process parameter[1]. A ZnGa_2O_4 phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP). The XRD patterns indicate that the Mn-doped ZnGa_2O_4 phosphor thin films show a (311) main peak and a spinel phase. A ZnGa_2O_4 phosphor thin film has better crystallization due to as function of increasing……   
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