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  Two series of hydrogenated microcrystalline thin films deposited with RF- and VHF-PECVD technique under different substrate temperature have been comparatively investigated in this paper.During all the deposition processes,in situ optical emission spectroscopy(OES)measurements have been performed,the characteristic peak intensities(such as Ⅰ_(Hα)* and Ⅰ_(Hα)*)in H_2+SiH_4 plasmas have been studied and it has been identified that the increase of plasma excitation frequency is favorite to produce atomic hydrogen and SiHx radicals.With Raman spectra and thickness measurements,the difference of structural properties and deposition rates for these two series of samples have been compared,it can be concluded that both the crystallinity and deposition rate of μc-Si:H thin films are strongly enhanced because of the increase of atomic hydrogen and SiHx radicals in VHF plasma,and it is well consistent with the OES results.Moreover,with FTIR measurements,the hydrogen contents of the two series ofμc-Si:H thin films were estimated,it has been identified that the hydrogen contents in all VHF-PECVD deposited μc-Si:H thin films are significant smaller than those in RF-PECVD-deposited ones.Finally; light-soaking experiments were performed on two typical μc-Si:H thin films comparatively deposited under RF and VHF plasma,and it has been proved more directly that the stability of VHF-PECVD sample is obviously better than that of RF-PECVD one.……   
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